C3387 Просмотр технического описания (PDF) - Inchange Semiconductor
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C3387 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3387
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A ;IB=0.8A
VCB=800V; IE=0
VEB=4V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=5V
MIN TYP. MAX UNIT
500
V
6
V
5.0
V
1.5
V
10 μA
10 μA
15
2
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