2SC3970 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SC3970 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3970 2SC3970A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=0.6A; IB=0.17A
VBEsat Base-emitter saturation voltage
IC=0.6A; IB=0.17A
ICBO
Collector
cut-off current
2SC3970 VCB=800V; IE=0
2SC3970A VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.6A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.6A; IB1=0.17A
IB2=-0.34A;VCC=200V
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1
mA
0.1
mA
15
8
20
MHz
1.0
μs
3.0
μs
0.3
μs
2
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