2SC4550 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4550 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4550
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 4.0A ; IB= 0.4A, L= 1mH
60
VCEX(SUS)
Collector-Emitter Sustaining Voltage
IC= 4.0A ; IB1= -IB2= 0.4A,
VBE(OFF)=-1.5V, L=180μH,clamped
60
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB=B 0.3A
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
ICER
ICEX
IEBO
hFE-1
hFE-2
www.iscsemi.cn Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
VCE= 60V ; RBE= 50Ω,Ta=125℃
VCE= 60V; VBE(off)= -1.5V
VCE= 60V; VBE(off)= -1.5V,Ta=125℃
VEB= 5V; IC= 0
IC= 0.7A ; VCE= 2V
100
IC= 1.5A ; VCE= 2V
100
hFE-3
DC Current Gain
IC= 4.0A ; VCE= 2V
60
V
V
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
1.0 mA
10 μA
1.0 mA
10 μA
400
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
100
pF
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
150
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4.0A ,RL= 12.5Ω,
IB1= -IB2= 0.2A,VCC≈ 50V
0.3 μs
1.5 μs
0.3 μs
hFE-2 Classifications
M
L
K
100-200 150-300 200-400
isc Website：www.iscsemi.cn
2
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