2SC5053 Просмотр технического описания (PDF) - ROHM Semiconductor
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2SC5053 Datasheet PDF : 3 Pages
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Transistors
2SC5053
Medium power transistor (50V, 1A)
2SC5053
zFeatures
1) Low saturation voltage, typically VCE(sat) = 0.12V at IC /
IB = 500mA / 50mA
2) PC=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SA1900
zDimensions (Unit : mm)
MPT3
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter- base voltage
VEBO
5
Collector current
1
IC
2
0.5
Collector power dissipation
PC
2
Collector power dissipation
tj
150
Storage temperature
tstg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 40 0.7mm seramic board.
(1)Base
(2)Collector
(3)Emitter
Unit
V
V
V
A
A (Pulse) ∗1
W
W
∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min. Typ. Max. Unit
Conditions
60
−
−
V IC=50µA
50
−
−
V IC=1mA
5
−
−
V IE=50µA
−
−
0.1
µA VCB=40V
−
−
0.1
µA VEB=4V
−
−
0.4
V IC/IB=500mA/50mA
120
−
390
− VCE/IC=3V/0.5A
−
150
−
MHz VCE=5V , IE=−50mA , f=100MHz
−
15
−
pF VCB=10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SC5053
Package
MPT3
hFE
Marking
QR
CG ∗
Code
T100
Basic ordering unit (pleces)
1000
∗ Denotes hFE
Rev.D
1/2
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