2SC5249 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SC5249

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5249

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 600V(Min)

·High Switching Speed

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

VCBO

VCEO

VEBO

www.iscsemi.cn PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE UNIT

600

V

600

V

7

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

6

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1.5

A

35

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: