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2SC5717 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC5717
Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
2SC5717 Datasheet PDF : 5 Pages
1
2
3
4
5
20
4
16
I
C
– V
CE
3.5
3
2.5
1.0
1.2
1.4
1.6 1.8
2
12
0.8
0.6
0.4
8
IB
=
0.2 A
4
Common emitter
Tc
=
25°C
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
h
FE
– I
C
300
100
Tc
=
100°C
30
25
-
25
10
3
1
Common emitter
VCE
=
5 V
0.5
0.01 0.03 0.1 0.3
1
3
10
30
Collector current I
C
(A)
20
Common emitter
VCE
=
5 V
16
I
C
– V
BE
12
8
4
Tc
=
100°C
25
-
25
0
0
0.2
0.4
0.6
0.8
1
1.2
Base-emitter voltage V
BE
(V)
2
2SC5717
2001-11-27
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