2SD1115 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SD1115

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1115(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 400

—

voltage

Collector to emitter sustain

VCEO(sus)

300

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

ICEO

—

—

DC current transfer ratio

hFE

500 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Turn off time

Note: 1. Pulse test.

ton

—

1.0

toff

—

22

Max

—

—

—

100

—

1.5

2.0

—

—

Unit

V

Test conditions

IC = 0.1 mA, IE = 0

V

IC = 2 A, PW = 50 µs,

f = 50 Hz, L = 10 mH

V

IE = 50 mA, IC = 0

µA

VCE = 300 V, RBE = ∞

VCE = 2 V, IC = 2 A*1

V

IC = 2 A, IB = 20 mA*1

V

µs

IC = 2 A, IB1 = –IB2 = 20 mA

µs

Maximum Collector Dissipation Curve

60

40

20

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

10

3

iC (peak)

IC (max)

Ta = 25°C

1.0

0.3

0.1

0.03

0.01

0.003

0.005

0.5 1.0 2 5 10 20 50 100200 500

Collector to emitter voltage VCE (V)

2

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