2SD1265Q Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD1265Q Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1265 2SD1265A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2SD1265
2SD1265A
IC=0.2A , L=25mH
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE
Base-emitter on voltage
IC=1A ; VCE=3V
ICBO
Collector cut-off current
VCB=20V; IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=3V
hFE-2
DC current gain
IC=1A ; VCE=3V
MIN TYP. MAX UNIT
60
V
80
1.0
V
1.2
V
30
µA
1
mA
40
30
160
hFE-2 Classifications
Q
P
O
30-60 500-100 80-160
2
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