2SD1718 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SD1718 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A
VBE
Base-emitter voltage
IC=8A ; VCE=5V
ICBO
Collector cut-off current
VCB=180V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
hFE-2 classifications
Q
S
P
60-100
80-160
100-200
Product Specification
2SD1718
MIN TYP. MAX UNIT
2.5
V
1.8
V
50 μA
50 μA
20
60
200
20
20
MHz
230
pF
2
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