2SD2449 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD2449

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2449

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 160V(Min)

·High DC Current Gain-

: hFE= 3000( Min.) @(IC= 8A, VCE= 5V)

·Low Collector Saturation Voltage-

: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB=B 8mA)

·Complement to Type 2SB1594

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1

A

150

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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