2SD756 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SD756 Datasheet PDF : 6 Pages
| |||
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SD755
2SD756
2SD756A Unit
100
120
140
V
100
120
140
V
5
5
5
V
50
50
50
mA
750
750
750
mW
150
150
150
°C
–55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
Collector to base
breakdown voltage
V(BR)CEO 100 — —
120 — —
140 — —
V
IC = 1 mA,
RBE = ∞
V(BR)CBO 100 — —
120 — —
140 — —
V
IC = 10 µA, IE = 0
Collector cutoff current ICBO
— — 0.5 — — 0.5 — — 0.5
DC current transfer ratio hFE1*1 250 — 1200 250 — 800 250 — 500
hFE2
125 — — 125 — — 125 — —
Base to emitter voltage VBE
— — 0.75 —
0.75 — — 0.75
Collector to emitter
saturation voltage
VCE(sat) — — 0.2 — — 0.2 — — 0.2
Gain bandwidth product fT
— 350 — — 350 — — 350 —
Collector output
capacitance
Cob — 1.6 — — 1.6 — — 1.6 —
Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows.
D
E
F
µA VCB = 100 V, IE = 0
VCE = 12 V,
IC = 2 mA
VCE = 12 V,
IC = 10 mA
V VCE = 12 V,
IC = 2 mA
V IC = 10 mA,
IB = 1 mA
MHz VCE = 12 V,
IC = 5 mA
pF VCB = 25 V, IE = 0,
f = 1 MHz
2SD755
250 to 500 400 to 800 600 to 1200
2SD756
250 to 500 400 to 800 —
2SD756A 250 to 500 —
—
2
Share Link: 