2SD756 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SD756 Datasheet PDF : 6 Pages
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2SD755, 2SD756, 2SD756A
1,000
Gain Bandwidth Product vs.
Collector Current
300
VCE = 12 V
100
30
10
0.01 0.03 0.1 0.3
1.0 3
10 30
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
20
IE = 0
10
5
2
1.0
0.5
1
3
10
30
100
Collector to Base Voltage VCB (V)
Area of Safe Operation
100
IC (max) (DC Operation)
50
20
Pc = 750 mW
Ta = 25°C
(50 V, 15 mA)
10
5
(100 V, 6 mA)
(120 V, 5 mA)
2
(140 V, 4 mA)
2SD756
2SD755 2SD756A
1
5 10 20 50 100 200 500
Collector to Emitter Voltage VCE (V)
4
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