2SJ280S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SJ280S Datasheet PDF : 8 Pages
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2SJ280 L , 2SJ280 S
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
–2.0
Pulse Test
–1.6
–1.2
ID = –30 A
–0.8
–20 A
–0.4
–10 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain-Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
0.005
–2
VGS= –4 V
–10 V
–5 –10 –20 –50 –100 –200
Drain Current I D (A)
Static Drain-Source on State
Resistance vs. Temperature
0.1
Pulse test
0.08
I D = –30 A
0.06
VGS= –4 V
–10 A, –20 A
0.04
I D = –30 A
0.02
–10 V
–10 A, –20 A
0
–40 0 40 80 120 160
Case Temperature TC (°C)
Forward Transfer Admittance
vs. Drain Current
100
Pulse Test
50
VDS = –10 V
20
Tc = 25°C
–25°C
10
75°C
5
2
1
–0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
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