2SJ567(2002) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SJ567 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
6
Common source
VGS = -10 V
5 Pulse test
ID = -1.5 A
-1.2
4
3
-1.0
2
1
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
-10
Common source
Tc = 25°C
Pulse test
IDR – VDS
-1
2SJ567
-0.1
0
-5
0.2
-3
0.4
-1
VGS = 0 V
0.6
0.8
1
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
-0.1
-1
-10
Drain-source voltage VDS (V)
Crss
-100
Vth – Tc
5
Common source
4
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
VDS
-160
-120
-80
-40
VDS = -40 V
-180
-80
VGS
-16
-12
Common source
ID = -2 5 A
Tc = 25°C
Pulse test
-8
-4
0
0
4
8
12
16
20
Total gate charge Qg (nC)
4
2002-08-12
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