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Номер в каталоге
Компоненты Описание
2SJ567(2002) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SJ567
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
Toshiba
2SJ567 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
-
2 0
Common source
-
8
-
6
-
5
-
4.8
Tc
=
25°C
Pulse test
-
10
-
1 6
-
15
-
4.6
-
1 2
-
4.4
-
0 8
-
4.2
VGS
= -
4 V
-
0.4
0
0
-
1
-
2
-
3
-
4
-
5
Drain-source voltage V
DS
(V)
-
10
Common source
VDS
= -
10 V
-
8
Pulse test
I
D
– V
GS
Tc
= -
55°C
-
6
25
-
4
100
-
2
0
0
-
2
-
4
-
6
-
8
-
10
Gate-source voltage V
GS
(V)
10
Common source
VDS
= -
10 V
Pulse test
ï
Y
fs
ï
– I
D
Tc
= -
55°C
25
100
1
2SJ567
-
5
-
10
-
4
-
15
-
3
-
2
-
1
I
D
– V
DS
-
6
Common source
Tc
=
25°C, Pulse test
-
8
-
5.75
-
5 5
-
5 25
-
5
-
4 8
-
4 6
-
4.4
-
4 2
VGS
= -
4 V
0
0
-
10
-
20
-
30
-
40
-
50
Drain-source voltage V
DS
(V)
-
10
-
8
-
6
-
4
-
2
0
0
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse test
ID
= -
2.5 A
-
1 5
-
0 8
-
4
-
8
-
12
-
16
-
20
Gate-source voltage V
GS
(V)
R
DS (ON)
– I
D
10
Common source
Tc
=
25°C
Pulse test
VGS
= -
10 V
-
15
1
0.1
-
0.1
-
1
Drain current I
D
(A)
0.1
-
10
-
0.1
3
-
1
-
10
Drain current I
D
(A)
2002-08-12
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