2SJ533 Просмотр технического описания (PDF) - Renesas Electronics

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2SJ533

Silicon P Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SJ533

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.028 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

Outline

RENESAS Package code: PRSS0003AE-A

(Package name: TO-220C•FM)

G

123

REJ03G0883-0400

(Previous: ADE-208-649B)

Rev.4.00

Sep 07, 2005

D

1. Gate

2. Drain

3. Source

S

Rev.4.00 Sep 07, 2005 page 1 of 7

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