2SK2926 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK2926

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2926(L), 2SK2926(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.042Ω typ.

• 4V gate drive devices.

• High speed switching

Outline

DPAK–2

D

G

S

4

4

12 3

12 3

1. Gate

2. Drain

3. Source

4. Drain

ADE-208-535

1st. Edition

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