2SK2926 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SK2926 Datasheet PDF : 10 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
I D = 20 A
0.8
0.4
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
2SK2926(L), 2SK2926(S)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
0.02
VGS = 4 V
10 V
0.01
1
2
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
I D = 10 A 5 A
0.08 V GS = 4 V
0.04
0
–40
10 V
20 A 10 A 5 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
25 °C
2
75 °C
1
V DS = 10 V
0.5
Pulse Test
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
5
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