2SK3161L Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK3161L Datasheet PDF : 9 Pages
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2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
ADE-208-734A (Z)
2nd. Edition
February 1999
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
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