2SK3431-S Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3431-S Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
10
VGS = 4 V
8
6
4
VGS = 10 V
2
0
ID = 42 A
−50
0
50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
0.1
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
ID - Drain Current - A
2SK3431
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
VGS = 10 V
100
10
VGS = 0 V
1
0.10
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
10
0.1
td(off)
tf
tr
td(on)
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
70
60
VDD = 32 V
20 V
50
8V
14
12
VGS
10
40
8
30
6
20
4
VDS
10
2
0
0 20 40 60 80 100 120 140 160
QG - Gate Charge - nC
Data Sheet D14600EJ3V0DS
5
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