2SK3419 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SK3419

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3419

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS (on) = 4.3 mΩ typ.

• 4 V gate drive device

• High speed switching

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

D

1

2

3

G

S

REJ03G1099-0200

(Previous: ADE-208-942)

Rev.2.00

Sep 07, 2005

1. Gate

2. Drain (Flange)

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 7

Share Link: