FUNCTIONAL DESCRIPTION
conducted with the device mounted on a typical PC board
placed horizontally in a 33 cubic inch still air enclosure. The
PC board was made of FR4 material measuring 2.5 by
2.5 inches, having double-sided circuit traces of 1.0 ounce
copper soldered to each device pin. The board temperature
was measured with thermal couple soldered to the board
surface one inch away from the center of the device. The
ambient temperature of the enclosure was measured with a
second thermal couple located over the center of one inch
distance from device.
THERMAL PERFORMANCE
Figure 21 illustrates the worst case thermal component
parameters values for the 33291L in the 24-lead SOIC wide
body surface mount package. Pins 5, 6, 7, 8, 17, 18, 19, and
20 of the package were connected directly to the lead frame
flag. The parameter values indicated take into account
adjacent output combinations. The characterization was
conducted over power dissipation levels of 0.7 W to 17 W.
The junction-to-ambient temperature resistance was found to
be 40°C/W with a single output active (34°C/W with all
outputs dissipating equal power 0 and the thermal resistance
from junction-to-PC board (Rjunction-board) to be 30°C/W
(board temperature, measure one inch from device center).
The junction-to-heatsink lead resistance was found again to
approximate 10°C/W. Devoting additional PC board metal
around the heatsinking pins for this package improved the
Rpkg from 33° to 31°C/W.
The total power dissipation available is dependent on the
number of outputs enabled at any one time. At 25°C the
RDS(ON) in 450 mΩ with a coefficient of 6500 ppm/°C. For the
junction temperature to remain below 150°C, the maximum
available power dissipation must decrease as the ambient
temperature increases. Figure 24 depicts the per output limit
of current at ambient temperatures necessary when one,
four, or eight outputs are enable ON. Figure 23 illustrates
how the RDS(ON) output value is affected by junction
temperature.
Output 0
Output 1
Output 2
Junction Temperature Node
VD - TD (C°)
(Volts represent Die Surface Temperature)
Output 6
Output 7
Rd0
Cd0
Rd1
Cd1
Rd2
Cd2
Rd6
Cd6
Rd7
Cd7
IPWR (Steady State or Transient)
(1.0 A = 1.0 W of Device Power Dissipation)
Rpkg = Rleads + RPC Board
Flag Temperature Node
Cpkg = Cflag + CPC Board
Package
24-Lead
SOIC
Rdx
(Ω)*
7.0
Cdx
(F)*
0.002
Rpkg
(Ω)*
33
Cpkg
(F)*
0.15
* Ω = °C/W, F = W s/°C, IPWR = W, and VA = °C
Ambient Temperature Node
VA = TA (C°)
(1.0 V = 1°C Ambient Temperature)
Figure 21. Thermal Model (Electrical Equivalent)
Analog Integrated Circuit Device Data
Freescale Semiconductor
33291L
21