74LVC38A Просмотр технического описания (PDF) - Philips Electronics
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74LVC38A Datasheet PDF : 14 Pages
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Philips Semiconductors
Quad 2-input NAND gate (open drain)
Product specification
74LVC38A
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
1.2
2.7 to 3.6
VIL
LOW-level input voltage
1.2
2.7 to 3.6
VOL
ILI
IOZ
ICC
∆ICC
LOW-level output voltage
input leakage current
3-state output OFF-state
current
quiescent supply current
additional quiescent supply
current per input pin
VI = VIH or VIL
IO = 100 µA
IO = 12 mA
IO = 24 mA
VI = 5.5 V or GND
VI = VIH or VIL;
VO = 5.5 V or GND
VI = VCC or GND; IO = 0
VI = VCC − 0.6 V; IO = 0
2.7 to 3.6
2.7
3.0
3.6
3.6
3.6
2.7 to 3.6
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
1.2
2.7 to 3.6
VIL
LOW-level input voltage
1.2
2.7 to 3.6
VOL
ILI
IOZ
ICC
∆ICC
LOW-level output voltage
input leakage current
3-state output OFF-state
current
quiescent supply current
additional quiescent supply
current per input pin
VI = VIH or VIL
IO = 100 µA
IO = 12 mA
IO = 24 mA
VI = 5.5 V or GND
VI = VIH or VIL;
VO = 5.5 V or GND
VI = VCC or GND; IO = 0
VI = VCC − 0.6 V; IO = 0
2.7 to 3.6
2.7
3.0
3.6
3.6
3.6
2.7 to 3.6
MIN.
VCC
2.0
−
−
−
−
−
−
−
−
−
VCC
2.0
−
−
−
−
−
−
−
−
−
Note
1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
TYP. MAX. UNIT
−
−
V
−
−
V
−
GND V
−
0.8
V
GND 0.20 V
−
0.40 V
−
0.55 V
±0.1 ±5
µA
0.1
±10
µA
0.1
10
µA
5
500
µA
−
−
V
−
−
V
−
GND V
−
0.8
V
−
0.3
V
−
0.6
V
−
0.8
V
−
±20
µA
−
±20
µA
−
40
µA
−
5000 µA
2004 Mar 22
6
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