A4957
Full Bridge MOSFET Driver
ELECTRICAL CHARACTERISTICS Valid at TA = 25°C, VBB = 17 V, VDD = 3 to 5.5 V; unless otherwise noted
Characteristics
Symbol
Test Conditions
Min.
Typ.
Supply and Reference
VBB Functional Operating Range1
VDD Range
VBB Quiescent Current
VDD Quiescent Current
VREG Output Voltage
VBB
VDD
IBBQ
IBBS
IVDDQ
IVDDS
VREG
RESET = high, GHx, GLx = low, VBB = 12 V
RESET= low, VBB = 12 V
RESET = high, outputs low
RESET = low
VBB > 9 V, IREG = 0 to 8 mA
7.5 V < VBB ≤ 9 V, IREG = 0 to 6 mA
6 V < VBB ≤ 7.5 V, IREG = 0 to 5 mA
4.5
–
3
–
–
1
–
–
–
2
–
–
12.65
13
12.65
13
2 × VBB
– 2.5
–
Bootstrap Diode Forward Voltage
Bootstrap Diode Resistance
Bootstrap Diode Current Limit
Gate Output Drive
4.5 V < VBB ≤ 6 V, IREG < 4 mA
6.5
9.5
VfBOOT
ID = 10 mA
ID = 100 mA
0.4
0.7
1.5
2.2
rD
rD(100mA) =
(VfBOOT(150mA) – VfBOOT(50mA)) / 100 mA
6
10
IDBOOT
250
500
Turn-On Time
Turn-Off Time
Pull-up On Resistance
Pull-down On Resistance
GHx Output Voltage
GLx Output Voltage
Turn-Off Propagation Delay2
Turn-On Propagation Delay2
Propagation Delay Matching - Phase to
Phase
tr
tf
RDS(on)UP
RDS(on)DN
VGH
VGL
tp(off)
tp(on)
CLOAD = 1 nF, 20% to 80% points
CLOAD = 1 nF, 80% to 20% points
TJ = 25°C, IGHX = –150 mA
TJ = 150°C, IGHX = –150 mA
TJ = 25°C, IGLX = –150 mA
TJ = 150°C, IGLX = –150 mA
Bootstrap capacitor fully charged
Input change to unloaded gate output change
Input change to unloaded gate output change
ΔtPP Same phase change
–
–
8
13
3
6
VCX – 0.2
VREG – 0.2
60
60
–
35
20
11
18.5
6
9
–
–
90
90
10
Propagation Delay Matching - On to Off
ΔtOO
Single phase
RDEAD tied to GND
–
10
–
0
Dead Time2
tDEAD
RDEAD = 3 kΩ
RDEAD = 30 kΩ
RDEAD = 240 kΩ
RDEAD tied to VDD
–
180
815
960
–
3.5
–
6
Max.
50
5.5
2
10
4
10
13.9
13.9
–
–
1.0
2.8
20
750
–
–
16
24
8
12
–
–
150
150
–
–
–
–
1150
–
–
Unit
V
V
mA
μA
mA
μA
V
V
V
V
V
V
Ω
mA
ns
ns
Ω
Ω
Ω
Ω
V
V
ns
ns
ns
ns
ns
ns
ns
μs
μs
Continued on the next page…
Allegro MicroSystems, Inc.
4
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com