ACST12 Просмотр технического описания (PDF) - STMicroelectronics
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ACST12 Datasheet PDF : 12 Pages
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Characteristics
ACST12
Figure 6. On-state characteristics
(maximum values)
ITM (A)
1000
100
10
Tj=125 °C
1
0
Tj=25 °C
1
2
VTM (V)
3
Tj max :
Vto = 0.90 V
Rd = 30 mΩ
4
5
Figure 7.
Non repetitive surge peak on-state
current vs. number of cycles
(Tj initial = 25 °C)
130 ITSM(A)
120
110
100
90
80
70
60
50
40
30
20 Repetitive
10 TC=104 °C
0
1
Non repetitive
Tj initial=25 °C
t=20ms
One cycle
Number of cycles
10
100
1000
Figure 8.
Non repetitive surge peak on-state Figure 9.
current for a sinusoidal pulse and
corresponding value of I²t
Relative variation of gate triggering
current (IGT) and voltage (VGT) vs.
junction temperature (typical value)
I (A), I2t (A2s)
TSM
10000
1000
dI/dt limitation: 100 A/µs
Tj initial=25 °C
ITSM
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
3.0
2.5
IGT Q3
2.0
IGT Q1-Q2
100
10
1
0.01
0.10
1.5
I²t
1.0
VGT Q1-Q2-Q3
1.00
0.5
tP(ms)
0.0
10.00
-50
-25
0
T j(°C)
25
50
75
100
125
Figure 10. Relative variation of holding
Figure 11. Relative variation of critical rate of
current (IH) and latching current (IL)
vs. junction temperature
decrease of main current (di/dt)c
vs. (dV/dt)c
I ,I [T ]/I , I [T = 25 °C]
2.5
HL j H L j
1.6 (di/dt)c[(dV/dt)c] / Specified(di/dt)c
1.4
2.0
1.2
1.5
1.0
Typical values
0.8
1.0
0.6
IL
0.4
0.5
IH
0.2
0.0
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
0.1
1
ACST12-7Cxx
ACST12-7Sxx
(dV/dt)c (V/µs)
10
100
4/12
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