ADG5236(RevA) Просмотр технического описания (PDF) - Analog Devices

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производитель

ADG5236
(Rev.:RevA)

High Voltage Latch-Up Proof, Dual SPDT Switches

Analog Devices 

ADG5236

Data Sheet

Parameter

POWER REQUIREMENTS

IDD

ISS

25°C

45

55

0.001

VDD/VSS

1 Guaranteed by design; not subject to production test.

−40°C to +85°C

−40°C to +125°C

70

1

±9/±22

Unit

µA typ

µA max

µA typ

µA max

V min/V max

Test Conditions/Comments

VDD = +16.5 V, VSS = −16.5 V

Digital inputs = 0 V or VDD

Digital inputs = 0 V or VDD

GND = 0 V

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter

ANALOG SWITCH

Analog Signal Range

On Resistance, RON

On-Resistance Match

Between Channels, ∆RON

On-Resistance Flatness, RFLAT (ON)

LEAKAGE CURRENTS

Source Off Leakage, IS (Off )

Drain Off Leakage, ID (Off )

Channel On Leakage, ID (On), IS (On)

DIGITAL INPUTS

Input High Voltage, VINH

Input Low Voltage, VINL

Input Current, IINL or IINH

Digital Input Capacitance, CIN

DYNAMIC CHARACTERISTICS1

Transition Time, tTRANSITION

tON

tOFF

Break-Before-Make Time Delay, tD

Charge Injection, QINJ

25°C

140

160

1.3

8

33

45

0.01

0.1

0.01

0.1

0.02

0.2

0.002

3

150

210

150

190

155

180

60

−0.6

−40°C to +85°C

200

9

55

0.2

0.4

0.4

260

235

200

−40°C to +125°C

VDD to VSS

230

10

60

0.4

1.2

1.2

2.0

0.8

±0.1

290

267

215

30

Unit

V max

Ω typ

Ω max

Ω typ

Ω max

Ω typ

Ω max

nA typ

nA max

nA typ

nA max

nA typ

nA max

V min

V max

µA typ

µA max

pF typ

ns typ

ns max

ns typ

ns max

ns typ

ns max

ns typ

ns min

pC typ

Off Isolation

−85

dB typ

Channel-to-Channel Crosstalk

−85

dB typ

−3 dB Bandwidth

266

Insertion Loss

−7

MHz typ

dB typ

Rev. A | Page 4 of 20

Test Conditions/Comments

VS = ±15 V, IS = −1 mA, see Figure 25

VDD = +18 V, VSS = −18 V

VS = ±15 V, IS = −1 mA

VS = ±15 V, IS = −1 mA

VDD = +22 V, VSS = −22 V

VS = ±15 V, VD =  15 V, see Figure 27

VS = ±15 V, VD =  15 V, see Figure 27

VS = VD = ±15 V, see Figure 24

VIN = VGND or VDD

RL = 300 Ω, CL = 35 pF

VS = 10 V, see Figure 30

RL = 300 Ω, CL = 35 pF

VS = 10 V, see Figure 32

RL = 300 Ω, CL = 35 pF

VS = 10 V, see Figure 32

RL = 300 Ω, CL = 35 pF

VS1 = VS2 = 10 V, see Figure 31

VS = 0 V, RS = 0 Ω, CL = 1 nF, see

Figure 33

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 28

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 26

RL = 50 Ω, CL = 5 pF, see Figure 29

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 29

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