AM29DL800BB120FEB Просмотр технического описания (PDF) - Advanced Micro Devices

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Компоненты Описание

производитель

AM29DL800BB120FEB

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

Advanced Micro Devices 

PRELIMINARY

TEST CONDITIONS

3.3 V

Device

Under

Test

CL

6.2 kΩ

2.7 kΩ

Note: Diodes are IN3064 or equivalent

Figure 11. Test Setup

21519A-15

Table 7. Test Specifications

Test Condition

All

Unit

Output Load

1 TTL gate

Output Load Capacitance, CL

(including jig capacitance)

100

pF

Input Rise and Fall Times

5

ns

Input Pulse Levels

0.0–3.0

V

Input timing measurement reference

levels

1.5

V

Output timing measurement

reference levels

1.5

V

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

Steady

OUTPUTS

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Changing, State Unknown

Does Not Apply

Center Line is High Impedance State (High Z)

KS000010-PAL

3.0 V

0.0 V

Input

1.5 V

Measurement Level

1.5 V

Figure 12. Input Waveforms and Measurement Levels

Output

21519A-16

Am29DL800B

27

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