HYB39S256800T-8A Просмотр технического описания (PDF) - Infineon Technologies

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HYB39S256800T-8A

256 MBit Synchronous DRAM

Infineon Technologies 

18.2 Random Row Write (Interleaving Banks) with Precharge

Burst Length = 8, CAS Latency = 3

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

tCK3

CKE High

CS

RAS

CAS

WE

BS

AP

RAx

RBx

RAy

Addr

DQM

RAx

CAX

tRCD

RBx

CBx

RAy

CAy

tWR

tRP

tWR

Hi-Z

DQ

DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3

Activate

Command

Bank A

Write

Command

Bank A

Activate

Command

Bank B

Write

Command

Bank B

Precharge

Command

Bank A

Activate

Command

Bank A

Write

Command

Bank A

Precharge

Command

Bank B

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