AOD4186 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AOD4186 Datasheet PDF : 6 Pages
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AOD4186
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4186 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for low
voltage inverter applications.
VDS (V) =40V
ID = 50A
RDS(ON) < 15mΩ
RDS(ON) < 19mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
Top View
D
TO-252
D-PAK Bottom View
100% UIS Tested!
100% R g Tested!
D
G
S
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
±20
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
35
27
Pulsed Drain Current C
IDM
70
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
10
8
Avalanche Current C
IAR
24
Repetitive avalanche energy L=0.1mH C
EAR
29
TC=25°C
Power Dissipation B TC=100°C
PD
50
25
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PDSM
TJ, TSTG
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
RθJA
16.7
40
25
50
Maximum Junction-to-Case
Steady-State
RθJC
2.5
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
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