AOD488L Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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AOD488L

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AOD488

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

40

45

V

IDSS

Zero Gate Voltage Drain Current

VDS=32V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

0.1 uA

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=250µA

1

2.3

3

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

50

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=20A

TJ=125°C

21.5 26

mΩ

34 41

VGS=4.5V, ID=8A

31

39 mΩ

gFS

Forward Transconductance

VDS=5V, ID=20A

25

S

VSD

Diode Forward Voltage

IS=1A, VGS=0V

0.76 1

V

IS

Maximum Body-Diode Continuous Current

20

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

404 500 pF

95

pF

37

pF

2.7

4

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=20V, ID=20A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=10V, VDS=20V, RL=1.0Ω,

tD(off)

Turn-Off DelayTime

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

9.2 12 nC

4.5

nC

1.6

nC

2.6

nC

3.5

ns

6

ns

13.2

ns

3.5

ns

22.9

ns

18.3

nC

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation PDSM is based on RthJA and the maximum allowed junction temperature of 150 °C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175 °C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 °C.

D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175 °C.

G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. The SOA

curve provides a single pulse rating.

Rev 0: Mar. 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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