AOD450 Просмотр технического описания (PDF) - Unspecified

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AOD450

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AOD450

N-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

200

V

IDSS

Zero Gate Voltage Drain Current

VDS=160V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±30V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=250µA

3

5

6

V

ID(ON)

On state drain current

VGS=10V, VDS=15V

10

A

RDS(ON)

Static Drain-Source On-Resistance VGS=10V, ID=3.8A

TJ=125°C

0.55 0.70

Ω

1.1 1.32

gFS

Forward Transconductance

VDS=15V, ID=3.8A

8.7

S

VSD

Diode Forward Voltage

IS=1A, VGS=0V

IS

Maximum Body-Diode Continuous CurrentG

0.8

1

V

6

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

215

pF

32

pF

7.2

pF

5.5

Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=10V, VDS=25V, ID=3.8A

VGS=10V, VDS=25V, RL=6.5Ω,

RGEN=3Ω

IF=3.8A, dI/dt=100A/µs

IF=3.8A, dI/dt=100A/µs

3.82

nC

0.92

nC

1.42

nC

1.47

nC

6.3

ns

3.3

ns

10.5

ns

2.8

ns

59

ns

142

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power

dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the

user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).

Rev1: Sep 2008

2/6

www.freescale.net.cn

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