AOD450
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL CHARACTERISTICS
14
12
10V
10
8
8V
6
4
7V
2
VGS=6V
0
0
5
10
15
20
VDS(Volts)
Figure 1:On-Region Characteristics
800
700
VGS=10V
600
500
400
300
200
0
1
2
3
4
5
6
7
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
1.0E+01
VDS=15V
1.0E+00
1.0E-01
125°C
4.6325°C
1.0E-02
1.0E-03
2
2.4
494
593
692
830
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
193
18
2.2
2
VGS=10V, 3.8A
1.8
1.6
1.4
1.2
1
0.8
0
25 50 75 15090 125 150 175
Temperat1u4re2(°C)
Figure 4: On-Resistance vs. Junction Temperature
1400
1200
1000
ID=3.8A
125°C
800
600
25°C
400
200
6
8 10 12 14 16 18 20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
3/6
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