AP2128(2008) Просмотр технического описания (PDF) - BCD Semiconductor

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AP2128
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics (Continued)

AP2128

VIN

VOUT

VIN

VOUT

Figure 16. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=2.5 to 3.5V, VOUT=0.8V)

Figure 17. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=4 to 5V, VOUT=3.3V)

VOUT

VShutdown

VOUT

VShutdown

Figure 18. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=3.3V)

Figure 19. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=0.8V)

Jun. 2008 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

11

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