AP2128(2008) Просмотр технического описания (PDF) - BCD Semiconductor

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AP2128
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2128

Electrical Characteristics

(AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Reference Voltage

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

Quiescent Current

Standby Current

Power Supply

Rejection Ratio

Output Voltage

Temperature Coefficient

Output Current Limit

Short Current Limit

Soft Start Time

RMS Output Noise

Shutdown "High" Voltage

Symbol

Conditions

VREF

VIN=2.5V

1mA≤IOUT≤300mA

VIN

IOUT(MAX)

∆VOUT

/(∆IOUT*VOUT)

∆VOUT

/(∆VIN*VOUT)

IQ

VIN-VOUT=1V,

1mA≤IOUT≤300mA

VOUT+0.5V≤VIN≤6V

IOUT=30mA

VIN=VOUT+1V, IOUT=0mA

ISTD

VIN=VOUT+1V,

VSHUTDOWN in off mode

PSRR

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

(∆VOUT/VOUT)

/∆T

IOUT=30mA, -40oC≤TJ≤85oC

ILIMIT

ISHORT

tUP

VNOISE

VOUT=0V

TA=25oC, 10Hz ≤f≤100kHz

Shutdown input voltage "High"

Min

0.748

2.5

1.5

Typ

0.8

450

60

0.1

65

65

45

±100

400

50

50

60

Shutdown "Low" Voltage

VOUT Discharge MOSFET

RDS(ON)

Shutdown Pull Down Resis-

tance

Shutdown input voltage "Low" 0

Shutdown input voltage "Low"

60

3

Thermal Shutdown

165

Thermal Shutdown Hysteresis

30

Max Unit

0.816 V

6

V

mA

0.6 %/A

0.06 %/V

90

µA

1.0 µA

dB

dB

dB

ppm/oC

mA

mA

µs

µVrms

6

V

0.4

V

Ω

MΩ

oC

oC

Jun. 2008 Rev. 1.1

BCD Semiconductor Manufacturing Limited

6

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