APM2095PUC-TU Просмотр технического описания (PDF) - Anpec Electronics
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APM2095PUC-TU Datasheet PDF : 9 Pages
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APM2095P
Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted)
Symbol
Parameter
PD
Maximum Power Dissipation TC=25°C
TC=100°C
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθJA*
Thermal Resistance – Junction to Ambient
RθJC
Thermal Resistance – Junction to Case
*Mounted on 1in2 pad area of PCB.
Rating
50
20
150
-55 to 150
50
2.5
Unit
W
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=-16V , VGS=0V
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)a
Drain-Source On-state
Resistance
VSDa Diode Forward Voltage
Dynamicb
VDS=VGS , IDS=-250µA
VGS=±10V , VDS=0V
VGS=-4.5V , IDS=-3.6A
VGS=-2.5V , IDS=-2A
ISD=-1A , VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V , IDS=-3.6A
VGS=-4.5V
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V , IDS=-3.6A ,
VGEN=-4.5V , RG=6Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-15V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
APM2095P
Unit
Min. Typ. Max.
-20
V
-1
µA
-0.5 -0.7 -1
V
±100 nA
70 95
mΩ
100 125
-0.7 -1.3
V
11
15
2
nC
1.5
13
22
36
56
ns
45
70
37
58
550
170
pF
120
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - Nov., 2003
www.anpec.com.tw
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