AS8220A
Objective Data Sheet - Electrical Characteristics
Table 3. Electrical Characteristics
Symbol
Parameter
Conditions
Min Typ Max Units
IBPidle
Absolute idle output current
on pin BP
-40V < VBP < 50V
0
7.5
mA
IBMidle
Absolute idle output current
on pin BM
-40V < VBM < 50V
0
IBPleak,
IBMleak
Absolute leakage current, VBP = VBM = 5V, VCC = 0V,
when not powered
VBAT = 0V; VIO = 0V
0
VBUSActiveHigh
Activity detection
differential input voltage
high
NORMAL mode
-10V < (VBP , VBM) < 15V
150
VBUSActiveLow
Activity detection
differential input voltage
low
NORMAL mode
-10V < (VBP , VBM)< 15V
-400
VData1
Data1 detection differential
input voltage
Pre-condition: activity already
detected. NORMAL mode.
-10V < (VBP , VBM)< 15V
150
VData0
Data0 detection differential
input voltage
Pre-condition: activity already
detected. NORMAL mode.
-10V < (VBP , VBM)< 15V
G VDataErr
Mismatch between Data0
and Data1 differential input
voltage
2 x (⎜⎜VData0⎜- ⎜VData1⎜⎜) /
(⎜VData0⎜+⎜VData1⎜) 2
A t tBUS_RxD10
Delay from BUS to RxD
negative edge
CRxD = 15 pF 3
s en tBUS_RxD01
Delay from BUS to RxD
positive edge
CRxD = 15 pF 3
m t tBIT
Bit time
CRxD = 15 pF 3
a n tRxD_ASYM
Delay time from BUS to
RxD mismatch
CRXD=15 pF;
|tBUS_RxD10- tBUS_RxD01| 3
co tRxD_FALL
Fall time RxD voltage
80% - 20% of VRxD;
CRxD=15 pF 3
l tRxD_RISE
Rise time RxD voltage
20% - 80% of VRxD;
CRxD=15 pF 3
a tBUSIdleDetection
Idle detection time
VBUS: 400mV → 0V
ic tBUSActivitiyDetection
Activity detection time
VBUS: 0V → 400mV
tBUSIdleReaction
Idle reaction time
VBUS: 400mV → 0V
tBUSActivityReaction
Activity reaction time
n Supply Voltage Monitor
VBUS: 0V → 400mV
h VCCTHH
VCC under-voltage
recovery threshold
c VCCTHL
VCC undervoltage detection
threshold
TeVIOTHH
VIO undervoltage recovery
threshold
-300
54
50
100
50
100
3.5
2.5
1.25
7.5
+10
225 400
-225 -150
still 225 300
-225 -150
10
80
80
5
5
5
200
250
300
350
4.5
3.5
2.0
mA
valid uA
mV
mV
mV
mV
%
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
VIOTHL
VIO undervoltage detection
threshold
0.75
1.5
V
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