BB404M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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BB404M Datasheet PDF : 11 Pages
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BB404M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
Unit
12
V
±10
V
–0
Å}10
V
25
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate1 to source breakdown voltage V(BR)G1SS
Gate2 to source breakdown voltage V(BR)G2SS
Gate1 to source cutoff current
I G1SS
Gate2 to source cutoff current
I G2SS
Gate1 to source cutoff voltage
VG1S(off)
Gate2 to source cutoff voltage
VG2S(off)
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance
c rss
Drain current
ID(op) 1
12
+10
±10
—
—
0.4
0.5
2.3
0.9
0.003
9
Typ
—
—
—
—
—
0.7
0.7
2.8
1.3
0.02
15
ID(op) 2
—
13
Forward transfer admittance
|yfs|1
22
27
|yfs|2
—
27
Power gain
PG1 24
29
PG2 —
29
Noise figure
NF1 —
1.2
NF2 —
1.2
Max Unit
—
V
—
V
—
V
+100 nA
±100 nA
1.0 V
1.0 V
3.6 pF
2.0 pF
0.05 pF
19
mA
—
mA
34
mS
—
mS
32
dB
—
dB
1.9 dB
—
dB
Test Conditions
ID = 200µA, VG1S = VG2S = 0
IG1 = +10µA, VG2S = VDS = 0
IG2 = ±10µA, VG1S = VDS = 0
VG1S = +9V, VG2S = VDS = 0
VG2S = ±9V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 180kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 180kΩ
VDS = 9V, VG1 = 9V
VG2S =6V, RG = 470kΩ
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 180kΩ, f = 1kHz
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 470kΩ, f = 1kHz
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 180kΩ, f = 200MHz
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 470kΩ, f = 200MHz
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 180kΩ, f = 200MHz
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 470kΩ, f = 200MHz
2
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