NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
−1.2
IC
(A)
−0.8
−0.4
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(3) (2) (1)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
−1.2
IC
(A)
−0.8
−0.4
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(3) (2) (1)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) IB = −16.0 mA
(2) IB = −14.4 mA
(3) IB = −12.8 mA
(4) IB = −11.2 mA
(5) IB = −9.6 mA
(6) IB = −8.0 mA
(7) IB = −6.4 mA
(8) IB = −4.8 mA
(9) IB = −3.2 mA
(10) IB = −1.6 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) IB = −13.0 mA
(2) IB = −11.7 mA
(3) IB = −10.4 mA
(4) IB = −9.1 mA
(5) IB = −7.8 mA
(6) IB = −6.5 mA
(7) IB = −5.2 mA
(8) IB = −3.9 mA
(9) IB = −2.6 mA
(10) IB = −1.3 mA
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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