BD8964FVM(2009) Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BD8964FVM
(Rev.:2009)

Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET

ROHM Semiconductor 

BD8964FVM

Technical Note

●Information on advantages

Advantage 1：Offers fast transient response with current mode control system.

Conventional product (Load response IO=0.1A→0.6A)

BD8964FVM (Load response IO=0.1A→0.6A)

VOUT

110mV

VOUT

58mV

IOUT

IOUT

Voltage drop due to sudden change in load was reduced

Fig.17 Comparison of transient response

Advantage 2： Offers high efficiency with synchronous rectifier

100

90 【VOUT=1.5V】

80

・For heavier load:

70

Utilizes the synchronous rectifying mode and the low on-resistance

60

MOS FETs incorporated as power transistor.

50

40

ON resistance of P-channel MOS FET : 350mΩ(Typ.)

30

ON resistance of N-channel MOS FET : 250mΩ(Typ.)

20

10

VCC=5V

Ta=25℃

0

1

10

100

1000

10000

OUTPUT CURRENT:IOUT[mA]

Advantage 3：・ Supplied in smaller package due to small-sized power

MOS FET incorporated.

Fig.18 Efficiency

・Output capacitor Co required for current mode control: 10μF ceramic capacitor

・Inductance L required for the operating frequency of 1 MHz: 4.7μH inductor

Reduces a mounting area required.

VCC

DC/DC

Convertor

Controller

RITH

CITH

Cin

L

VOUT

Co

15mm

CIN

RITH

L

10mm

CITH

CO

Fig.19 Example application

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© 2009 ROHM Co., Ltd. All rights reserved.

5/13

2009.05 - Rev.A

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