BF1100R Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

BF1100R

Dual-gate MOS-FETs

Philips Electronics 

Philips Semiconductors

Dual-gate MOS-FETs

Product specification

BF1100; BF1100R

handbook, full pagewidth

VAGC

R1

10 k Ω

C1

4.7 nF

C3 12 pF

RGEN

50 Ω

VI

C2

R2

50 Ω

4.7 nF

RG

VGG

DUT

L1

≈ 450 nH

C4

RL

50 Ω

4.7 nF

V DS

MGC420

For VGG = VDS = 9 V, RG = 180 kΩ.

For VGG = VDS = 12 V, RG = 250 kΩ.

Fig.27 Cross-modulation test set-up.

1995 Apr 25

11

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