BF1100R Просмотр технического описания (PDF) - Philips Electronics
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BF1100R Datasheet PDF : 14 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
BF1100
BF1100R
thermal resistance from junction to soldering point
BF1100
BF1100R
note 1
note 2
Ts = 92 °C
Ts = 78 °C
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
VALUE
500
550
290
360
UNIT
K/W
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
VG2-S(th)
gate 2-source threshold voltage
IDSX
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; IG1-S = 1 mA
VG1-S = VDS = 0; IG2-S = 1 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 9 V;
ID = 20 µA
VG2-S = 4 V; VDS = 12 V;
ID = 20 µA
VG1-S = 4 V; VDS = 9 V;
ID = 20 µA
VG1-S = 4 V; VDS = 12 V;
ID = 20 µA
VG2-S = 4 V; VDS = 9 V;
RG1 = 180 kΩ; note 1
VG2-S = 4 V; VDS = 12 V;
RG1 = 250 kΩ; note 2
VG2-S = VDS = 0; VG1-S = 12 V
VG1-S = VDS = 0; VG2-S = 12 V
Notes
1. RG1 connects gate 1 to VGG = 9 V; see Fig.27.
2. RG1 connects gate 1 to VGG = 12 V; see Fig.27.
MIN.
13.2
13.2
0.5
0.5
0.3
MAX.
20
20
1.5
1.5
1
UNIT
V
V
V
V
V
0.3
1
V
0.3
1.2
V
0.3
1.2
V
8
13
mA
8
13
mA
−
50
nA
−
50
nA
1995 Apr 25
4
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