BF1100R Просмотр технического описания (PDF) - Philips Electronics
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BF1100R Datasheet PDF : 14 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
50
handbook, halfpage
I G1
(µA)
40
30
20
10
MLD167
VGG = 9 V
8V
7V
6V
5V
4V
0
0
2
4
6
VG2 S (V)
VDS = 9 V.
RG1 = 180 kΩ (connected to VGG).
Tj = 25 °C.
Fig.15 Gate 1 current as a function of gate 2 voltage;
typical values.
50
handbook, halfpage
I G1
(µA)
40
30
20
MLD168
VGG = 12 V
11 V
10 V
9V
8V
7V
10
0
0
2
4
6
VG2 S (V)
VDS = 12 V.
RG1 = 250 kΩ (connected to VGG).
Tj = 25 °C.
Fig.16 Gate 1 current as a function of gate 2 voltage;
typical values.
handbook,1h6alfpage
ID
(mA)
12
8
4
MLD169
VGG = 9 V
8V
7V
6V
5V
4V
handbook,1h6alfpage
ID
(mA)
12
8
4
MLD170
VGG = 12 V
11 V
10 V
9V
8V
7V
0
0
2
4
6
VG2 S (V)
VDS = 9 V.
RG1 = 180 kΩ (connected to VGG).
Tj = 25 °C.
Fig.17 Drain current as a function of the gate 2
voltage; typical values; see Fig.27.
1995 Apr 25
0
0
2
4
6
VG2 S (V)
VDS = 12 V.
RG1 = 250 kΩ (connected to VGG).
Tj = 25 °C.
Fig.18 Drain current as a function of the gate 2
voltage; typical values; see Fig.27.
8
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