BF1207 Просмотр технического описания (PDF) - Philips Electronics
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BF1207 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aac890
bis
gis
102
|yfs|
(mS)
10
001aac891 −102
|yfs|
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 12. Amplifier A: input admittance as a function of
frequency; typical values
103
|yrs|
(µS)
102
001aac892 −103
ϕrs
(deg)
ϕrs
−102
|yrs|
10
−10
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 13. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
10
bos, gos
(mS)
1
001aac893
bos
10−1
gos
1
−1
10−2
10
102
103
10
102
103
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 14. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 15. Amplifier A: output admittance as a function of
frequency; typical values
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10 of 22
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