BF1207 Просмотр технического описания (PDF) - Philips Electronics
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BF1207 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
20
001aac884
(1)
(2)
(3)
10
(4)
(5)
(7)
(6)
0
0
8
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(A) = 5 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
16
25
ID
(mA)
20
15
10
001aac885
(1)
(2)
(3)
(4)
(5)
(6)
(7)
5
0
0
2
4
6
VGG = VDS (V)
(1) RG1(A) = 39 kΩ.
(2) RG1(A) = 47 kΩ.
(3) RG1(A) = 68 kΩ.
(4) RG1(A) = 82 kΩ.
(5) RG1(A) = 100 kΩ.
(6) RG1(A) = 120 kΩ.
(7) RG1(A) = 150 kΩ.
VG2-S = 4 V; Tj = 25 °C.
Fig 7. Amplifier A: drain current as a function of VDS
and VGG; typical values
001aac886
12
8
4
0
0
1
2
3
4
5
Vsupply (V)
VG2-S = 4 V, Tj = 25 °C, RG1(B) = 68 kΩ (connected to ground); see Figure 3.
Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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