BF1207 Просмотр технического описания (PDF) - Philips Electronics
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BF1207 Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
120
Vunw
(dBµV)
110
001aac887
100
90
80
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 29.
Fig 9. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
32
ID
(mA)
24
0
gain
reduction
(dB)
10
001aac888
20
30
40
50
0
1
2
3
4
VAGC (V)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
see Figure 29.
Fig 10. Amplifier A: gain reduction as a function of
AGC voltage; typical values
001aac889
16
8
0
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 °C; see Figure 29.
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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