BF1210 Просмотр технического описания (PDF) - Philips Electronics
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BF1210 Datasheet PDF : 21 Pages
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
0
gain
reduction
(dB)
20
001aaf499
110
Vunw
(dBµV)
105
100
001aaf500
95
40
90
60
0
1
2
3
4
VAGC (V)
85
0
10
20
30
40
50
gain reduction (dB)
VDS(B) = 5 V; VG2-S(nom) = 4 V; RG1(B) = 150 kΩ;
ID(nom)(B) = 13 mA; Tamb = 25 °C; see Figure 32.
Fig 25. Amplifier B: typical gain reduction as a function
of the AGC voltage; typical values
VDS(B) = 5 V; VG2-S(nom) = 4 V; RG1(B) = 150 kΩ;
ID(nom)(B) = 13 mA; fw = 50 MHz; funw = 60 MHz;
Tamb = 25 °C; see Figure 32.
Fig 26. Amplifier B: unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
15
ID
(mA)
12
001aaf501
9
6
3
0
0
10
20
30
40
50
gain reduction (dB)
VDS(B) = VGG = 5 V; VG2-S(nom) = 4 V; RG1(B) = 150 kΩ; ID(nom)(B) = 13 mA; f = 50 MHz; Tamb = 25 °C; see Figure 32.
Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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