BF1217 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1217 Datasheet PDF : 17 Pages
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NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
0
gain
reduction
(dB)
10
20
30
40
001aam163
120
Xmod
(dBμV)
110
100
90
001aam164
50
0
1
2
3
4
VAGC (V)
VDS = 5 V; VGG = 5 V; ID(nom) = 19 mA; RG1 = 82 k;
f = 50 MHz; Tj = 25 C; see Figure 17.
Fig 10. Typical gain reduction as a function of the
AGC voltage; typical values
40
ID
(mA)
30
80
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; VG2-S(nom) = 4 V; RG1 = 82 k;
fw = 50 MHz; funw = 60 MHz; ID(nom) = 19 mA; Tj = 25 C;
see Figure 17.
Fig 11. Unwanted voltage for 1 % cross modulation as
a function of gain reduction; typical values
001aam165
20
10
0
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; VG2-S(nom) = 4 V; RG1 = 82 k; fw = 50 MHz; ID(nom) = 19 mA; Tj = 25 C; see Figure 17.
Fig 12. Typical drain current as a function of gain reduction; typical values
BF1217WR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 June 2011
© NXP B.V. 2011. All rights reserved.
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