BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BF1218

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1218

Dual N-channel dual gate MOSFET

25

ID

(mA)

20

15

10

5

001aag367

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

24

ID

(mA)

16

8

001aag368

(1)

(2)

(3)

(4)

(5)

0

0

1

2

3

4

5

VGG = VDS (V)

0

0

2

4

6

VG2-S (V)

(1) RG1 = 47 k.

(2) RG1 = 56 k.

(3) RG1 = 68 k.

(4) RG1 = 82 k.

(5) RG1 = 86 k.

(6) RG1 = 100 k.

(7) RG1 = 120 k.

(8) RG1 = 150 k.

(9) RG1 = 180 k.

VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C; RG1 is

connected to VGG; see Figure 3.

Fig 23. Amplifier B: drain current as a function of

gate1 supply voltage and drain supply voltage;

typical values

(1) VGG = 5.0 V.

(2) VGG = 4.5 V.

(3) VGG = 4.0 V.

(4) VGG = 3.5 V.

(5) VGG = 3.0 V.

VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C;

RG1 = 86 k (connected to VGG); see Figure 3.

Fig 24. Amplifier B: drain current as a function of

gate2 voltage; typical values

BF1218_1

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 14 April 2010

© NXP B.V. 2010. All rights reserved.

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