BF1218 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
10−1
001aaa581
bis
gis
102
Yfs
(mS)
10
001aag374 −102
Yfs
ϕfs
(deg)
−10
ϕfs
10−2
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 29. Amplifier B: input admittance as a function of
frequency; typical values
1
−1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 30. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical
values
103
yrs
(μS)
102
−ϕrs
001aaa583 103
−ϕrs
(deg)
102
10
bos, gos
(mS)
1
001aag376
bos
yrs
10
10
10−1
gos
1
1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 31. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical
values
10−2
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 32. Amplifier B: output admittance as a function of
frequency; typical values
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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