BFR520T Просмотр технического описания (PDF) - Philips Electronics
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BFR520T Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Preliminary specification
BFR520T
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
20
handGbUooMk, halfpage
(dB)
18
MRC027
16
VCE = 6 V
3V
14
12
10
0
10
20
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
30
IC (mA)
Fig.6 Maximum unilateral power gain as a
function of collector current.
25
handbook, halfpage
gain
(dB)
20
15
10
MRC026
MSG
G max
G UM
5
0
0
10
20
30
IC (mA)
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10−2
G UM
MSG
10−1
MRC024
G max
1
10
f (GHz)
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
1999 Oct 18
handbook, 5ha0lfpage
gain
(dB)
40
G UM
30
MSG
MRC025
20
G max
10
0
10−2
10−1
1 f (GHz) 10
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
5
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